Samsung has developed a mobile DRAM module which it claims can transfer data four times faster than existing technology using less power.

The 1Gb DRAM has a wide interface designed for smartphones and tablets, and allows transfer speeds of 12.8GB/s. This increases the bandwidth of mobile DDR DRAM eightfold, and uses 87 per cent less power, Samsung said.

A total of 512 pins are used for data transfer compared to the previous maximum of 32. Samsung claimed that the new interface can support a maximum of 1,200 pins.

The breakthrough represents a significant contribution to the advancement of high-performance mobile products, according to Byungse So, senior vice president of memory product planning and application engineering at Samsung.

"We will continue to aggressively expand our high-performance mobile memory product line to further propel the growth of the mobile industry," he said.

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